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Vishay N-Kanal Dual, SMD MOSFET 20 V / 1,3 A 1,25 W, 6-Pin SOT-363

About The Vishay N-Kanal Dual, SMD MOSFET 20 V / 1,3 A 1,25 W, 6-Pin SOT-363, Drain-Source-Widerstand max.: 263 mΩ, Channel-Modus: Enhancement, Gate-Schwellenspannung min

Vishay N-Kanal Dual, SMD MOSFET 20 V / 1,3 A 1,25 W, 6-Pin SOT-363, Drain-Source-Widerstand max.: 263 mΩ, Channel-Modus: Enhancement, Gate-Schwellenspannung min.: 0.4V, Transistor-Konfiguration: Isoliert, Gate-Source Spannung max.: –8 V, +8 V, Länge: 2.2mm, Betriebstemperatur max.: +150 °C, MPN: SI1922EDH-T1-GE3

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Vishay N-Kanal Dual, SMD MOSFET 20 V / 1,3 A 1,25 W, 6-Pin SOT-363

More from Vishay | Vishay N-Kanal Dual, SMD MOSFET 20 V / 1,3 A 1,25 W, 6-Pin SOT-363, Drain-Source-Widerstand Max.: 263 MΩ, Channel-Modus: Enhancement, Gate-Schwellenspannung Min.: 0.4V, Transistor-Konfiguration: Isoliert, Gate-Source Spannung Max.: –8 V, +8 V, Länge: 2.2mm, Betriebstemperatur Max.: +150 °C, MPN: SI1922EDH-T1-GE3
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Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Specifications of Vishay N-Kanal Dual, SMD MOSFET 20 V / 1,3 A 1,25 W, 6-Pin SOT-363

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Vishay N-Kanal Dual, SMD MOSFET 20 V / 1,3 A 1,25 W, 6-Pin SOT-363
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