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STMicroelectronics SCT N-Kanal, THT MOSFET-Modul 1200 V / 65 A, 3-Pin HiP247

About The : 0,59 Ω, Channel-Modus: Depletion, Gate-Schwellenspannung max.STMicroelectronics SCT N-Kanal, THT MOSFET-Modul 1200 V / 65 A, 3-Pin HiP247, Drain-Source-Widerstand max

STMicroelectronics SCT N-Kanal, THT MOSFET-Modul 1200 V / 65 A, 3-Pin HiP247, Drain-Source-Widerstand max.: 0,59 Ω, Channel-Modus: Depletion, Gate-Schwellenspannung max.: 3V, Transistor-Werkstoff: SiC, MPN: SCT50N120

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

STMicroelectronics SCT N-Kanal, THT MOSFET-Modul 1200 V / 65 A, 3-Pin HiP247

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Specifications of STMicroelectronics SCT N-Kanal, THT MOSFET-Modul 1200 V / 65 A, 3-Pin HiP247

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STMicroelectronics SCT N-Kanal, THT MOSFET-Modul 1200 V / 65 A, 3-Pin HiP247
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