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Vishay SiHB125N60EF N-Kanal, SMD MOSFET 600 V / 25 A, 3-Pin D2PAK (TO-263)

About The : 0,125 Ω, Channel-Modus: Enhancement, Gate-Schwellenspannung max.Vishay SiHB125N60EF N-Kanal, SMD MOSFET 600 V / 25 A, 3-Pin D2PAK (TO-263), Drain-Source-Widerstand max

Vishay SiHB125N60EF N-Kanal, SMD MOSFET 600 V / 25 A, 3-Pin D2PAK (TO-263), Drain-Source-Widerstand max.: 0,125 Ω, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 5V, MPN: SIHB125N60EF-GE3

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Vishay SiHB125N60EF N-Kanal, SMD MOSFET 600 V / 25 A, 3-Pin D2PAK (TO-263)

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Specifications of Vishay SiHB125N60EF N-Kanal, SMD MOSFET 600 V / 25 A, 3-Pin D2PAK (TO-263)

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Vishay SiHB125N60EF N-Kanal, SMD MOSFET 600 V / 25 A, 3-Pin D2PAK (TO-263)
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