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Infineon CoolMOSâ„¢ CFD7 N-Kanal, THT MOSFET 600 V / 25 A, 3-Pin TO-220

About The Infineon CoolMOSâ„¢ CFD7 N-Kanal, THT MOSFET 600 V / 25 A, 3-Pin TO-220, Drain-Source-Widerstand max.: 0,09 O, Channel-Modus: Enhancement, Gate-Schwellenspannung max

Infineon CoolMOSâ„¢ CFD7 N-Kanal, THT MOSFET 600 V / 25 A, 3-Pin TO-220, Drain-Source-Widerstand max.: 0,09 O, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 4.5V, Anzahl der Elemente pro Chip: 1, Transistor-Werkstoff: Si, MPN: IPP60R090CFD7XKSA1

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Infineon CoolMOSâ„¢ CFD7 N-Kanal, THT MOSFET 600 V / 25 A, 3-Pin TO-220

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Specifications of Infineon CoolMOSâ„¢ CFD7 N-Kanal, THT MOSFET 600 V / 25 A, 3-Pin TO-220

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Infineon CoolMOSâ„¢ CFD7 N-Kanal, THT MOSFET 600 V / 25 A, 3-Pin TO-220
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