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STMicroelectronics STB37N60 N-Kanal, SMD MOSFET 1200 V / 12 A, 3-Pin H2PAK-2

About The : 0,69 Ω, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 4

STMicroelectronics STB37N60 N-Kanal, SMD MOSFET 1200 V / 12 A, 3-Pin H2PAK-2, Drain-Source-Widerstand max.: 0,69 Ω, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 4.9V, Transistor-Werkstoff: SiC, MPN: STH12N120K5-2

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

STMicroelectronics STB37N60 N-Kanal, SMD MOSFET 1200 V / 12 A, 3-Pin H2PAK-2

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Specifications of STMicroelectronics STB37N60 N-Kanal, SMD MOSFET 1200 V / 12 A, 3-Pin H2PAK-2

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STMicroelectronics STB37N60 N-Kanal, SMD MOSFET 1200 V / 12 A, 3-Pin H2PAK-2
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