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Infineon OptiMOS™-T N-Kanal, SMD MOSFET 120 V / 50 A, 3-Pin D2PAK (TO-263)

About The Infineon OptiMOS™-T N-Kanal, SMD MOSFET 120 V / 50 A, 3-Pin D2PAK (TO-263), Drain-Source-Widerstand max.: 0,0154 O, Channel-Modus: Enhancement, Gate-Schwellenspannung max

Infineon OptiMOS™-T N-Kanal, SMD MOSFET 120 V / 50 A, 3-Pin D2PAK (TO-263), Drain-Source-Widerstand max.: 0,0154 O, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 2.4V, Transistor-Werkstoff: Si, MPN: IPB50N12S3L15ATMA1

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Infineon OptiMOS™-T N-Kanal, SMD MOSFET 120 V / 50 A, 3-Pin D2PAK (TO-263)

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Specifications of Infineon OptiMOS™-T N-Kanal, SMD MOSFET 120 V / 50 A, 3-Pin D2PAK (TO-263)

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Infineon OptiMOS™-T N-Kanal, SMD MOSFET 120 V / 50 A, 3-Pin D2PAK (TO-263)
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