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STMicroelectronics N-Kanal, SMD MOSFET 600 V / 10 A, 3-Pin DPAK (TO-252)

About The : 390 mΩ, Gate-Schwellenspannung max.75V, MPN: STD12N60DM6

STMicroelectronics N-Kanal, SMD MOSFET 600 V / 10 A, 3-Pin DPAK (TO-252), Drain-Source-Widerstand max.: 390 mΩ, Gate-Schwellenspannung max.: 4.75V, MPN: STD12N60DM6

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

STMicroelectronics N-Kanal, SMD MOSFET 600 V / 10 A, 3-Pin DPAK (TO-252)

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Specifications of STMicroelectronics N-Kanal, SMD MOSFET 600 V / 10 A, 3-Pin DPAK (TO-252)

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STMicroelectronics N-Kanal, SMD MOSFET 600 V / 10 A, 3-Pin DPAK (TO-252)
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