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Infineon OptiMOS™ 3 N-Kanal, SMD MOSFET Transistor & Diode 80 V / 120 A, 3-Pin D2PAK (TO-263)

About The : 3.Infineon OptiMOS™ 3 N-Kanal, SMD MOSFET Transistor & Diode 80 V / 120 A, 3-Pin D2PAK (TO-263), Drain-Source-Widerstand max

Infineon OptiMOS™ 3 N-Kanal, SMD MOSFET Transistor & Diode 80 V / 120 A, 3-Pin D2PAK (TO-263), Drain-Source-Widerstand max.: 0,0031 O, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 3.8V, MPN: IPB031N08N5ATMA1

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Infineon OptiMOS™ 3 N-Kanal, SMD MOSFET Transistor & Diode 80 V / 120 A, 3-Pin D2PAK (TO-263)

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Specifications of Infineon OptiMOS™ 3 N-Kanal, SMD MOSFET Transistor & Diode 80 V / 120 A, 3-Pin D2PAK (TO-263)

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Infineon OptiMOS™ 3 N-Kanal, SMD MOSFET Transistor & Diode 80 V / 120 A, 3-Pin D2PAK (TO-263)
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