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STMicroelectronics MDmesh N-Kanal, SMD MOSFET 650 V / 17 A 125 W, 3-Pin D2PAK (TO-263)

About The STMicroelectronics MDmesh N-Kanal, SMD MOSFET 650 V / 17 A 125 W, 3-Pin D2PAK (TO-263), Drain-Source-Widerstand max.75mm, MPN: STB24NM60N

STMicroelectronics MDmesh N-Kanal, SMD MOSFET 650 V / 17 A 125 W, 3-Pin D2PAK (TO-263), Drain-Source-Widerstand max.: 190 mΩ, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 4V, Gate-Schwellenspannung min.: 2V, Transistor-Konfiguration: Einfach, Gate-Source Spannung max.: -30 V, +30 V, Länge: 10.75mm, MPN: STB24NM60N

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

STMicroelectronics MDmesh N-Kanal, SMD MOSFET 650 V / 17 A 125 W, 3-Pin D2PAK (TO-263)

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Specifications of STMicroelectronics MDmesh N-Kanal, SMD MOSFET 650 V / 17 A 125 W, 3-Pin D2PAK (TO-263)

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STMicroelectronics MDmesh N-Kanal, SMD MOSFET 650 V / 17 A 125 W, 3-Pin D2PAK (TO-263)
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