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STMicroelectronics STripFET II N-Kanal, SMD MOSFET 100 V / 35 A 115 W, 3-Pin D2PAK (TO-263)

About The STMicroelectronics STripFET II N-Kanal, SMD MOSFET 100 V / 35 A 115 W, 3-Pin D2PAK (TO-263), Drain-Source-Widerstand max.4mm, MPN: STB30NF10T4

STMicroelectronics STripFET II N-Kanal, SMD MOSFET 100 V / 35 A 115 W, 3-Pin D2PAK (TO-263), Drain-Source-Widerstand max.: 45 mΩ, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 4V, Gate-Schwellenspannung min.: 2V, Transistor-Konfiguration: Einfach, Gate-Source Spannung max.: -20 V, +20 V, Länge: 10.4mm, MPN: STB30NF10T4

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

STMicroelectronics STripFET II N-Kanal, SMD MOSFET 100 V / 35 A 115 W, 3-Pin D2PAK (TO-263)

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Specifications of STMicroelectronics STripFET II N-Kanal, SMD MOSFET 100 V / 35 A 115 W, 3-Pin D2PAK (TO-263)

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STMicroelectronics STripFET II N-Kanal, SMD MOSFET 100 V / 35 A 115 W, 3-Pin D2PAK (TO-263)
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