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Vishay TrenchFET® Gen IV N-Kanal Dual, SMD MOSFET 60 V / 38 A, 8-Pin PowerPAIR 3 X 3 FDC

About The .Vishay TrenchFET® Gen IV N-Kanal Dual, SMD MOSFET 60 V / 38 A, 8-Pin PowerPAIR 3 x 3 FDC, Drain-Source-Widerstand max

Vishay TrenchFET® Gen IV N-Kanal Dual, SMD MOSFET 60 V / 38 A, 8-Pin PowerPAIR 3 x 3 FDC, Drain-Source-Widerstand max.: 0,0122 Ω, 0,0127 Ω, 0,01811 Ω, 0,01887 Ω, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 2.4V, MPN: SiZ250DT-T1-GE3

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Vishay TrenchFET® Gen IV N-Kanal Dual, SMD MOSFET 60 V / 38 A, 8-Pin PowerPAIR 3 X 3 FDC

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Specifications of Vishay TrenchFET® Gen IV N-Kanal Dual, SMD MOSFET 60 V / 38 A, 8-Pin PowerPAIR 3 X 3 FDC

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Vishay TrenchFET® Gen IV N-Kanal Dual, SMD MOSFET 60 V / 38 A, 8-Pin PowerPAIR 3 X 3 FDC
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