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Vishay TrenchFET SQS414CENW-T1_GE3 N-Kanal Dual, SMD MOSFET 60 V / 18 A, 8-Pin PowerPAK 1212-8 W

About The 5V, Transistor-Werkstoff: Si.Vishay TrenchFET SQS414CENW-T1_GE3 N-Kanal Dual, SMD MOSFET 60 V / 18 A, 8-Pin PowerPAK 1212-8 W, Drain-Source-Widerstand max

Vishay TrenchFET SQS414CENW-T1_GE3 N-Kanal Dual, SMD MOSFET 60 V / 18 A, 8-Pin PowerPAK 1212-8 W, Drain-Source-Widerstand max.: 0,023 Ω, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 2.5V, Transistor-Werkstoff: Si

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Vishay TrenchFET SQS414CENW-T1_GE3 N-Kanal Dual, SMD MOSFET 60 V / 18 A, 8-Pin PowerPAK 1212-8 W

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Specifications of Vishay TrenchFET SQS414CENW-T1_GE3 N-Kanal Dual, SMD MOSFET 60 V / 18 A, 8-Pin PowerPAK 1212-8 W

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Vishay TrenchFET SQS414CENW-T1_GE3 N-Kanal Dual, SMD MOSFET 60 V / 18 A, 8-Pin PowerPAK 1212-8 W
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