Vishay E Series SIHG24N80AE-GE3 N-Kanal Dual, THT MOSFET 850 V / 21 A, 3-Pin TO-247AC, Drain-Source-Widerstand max.: 0,184 Ω, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 4V
Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET
Vishay E Series SIHG24N80AE-GE3 N-Kanal Dual, THT MOSFET 850 V / 21 A, 3-Pin TO-247AC
Specifications of Vishay E Series SIHG24N80AE-GE3 N-Kanal Dual, THT MOSFET 850 V / 21 A, 3-Pin TO-247AC | |
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Instock | instock |