reorder
business-to-business.mybogy.online
ALWAYS Be Happy search home
c
Combo Blog
Categories
Play Games New

Vishay E Series SIHG24N80AE-GE3 N-Kanal Dual, THT MOSFET 850 V / 21 A, 3-Pin TO-247AC

About The Vishay E Series SIHG24N80AE-GE3 N-Kanal Dual, THT MOSFET 850 V / 21 A, 3-Pin TO-247AC, Drain-Source-Widerstand max.: 4V

Vishay E Series SIHG24N80AE-GE3 N-Kanal Dual, THT MOSFET 850 V / 21 A, 3-Pin TO-247AC, Drain-Source-Widerstand max.: 0,184 Ω, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 4V

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Vishay E Series SIHG24N80AE-GE3 N-Kanal Dual, THT MOSFET 850 V / 21 A, 3-Pin TO-247AC

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Specifications of Vishay E Series SIHG24N80AE-GE3 N-Kanal Dual, THT MOSFET 850 V / 21 A, 3-Pin TO-247AC

Category
Instockinstock

Last Updated

Vishay E Series SIHG24N80AE-GE3 N-Kanal Dual, THT MOSFET 850 V / 21 A, 3-Pin TO-247AC
More Varieties

Rating :- 9.73 /10
Votes :- 43