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Vishay E Series SiHH080N60E-T1-GE3 N-Kanal Dual, SMD MOSFET 650 V / 32 A, 4-Pin PowerPAK 8 X 8

About The Vishay E Series SiHH080N60E-T1-GE3 N-Kanal Dual, SMD MOSFET 650 V / 32 A, 4-Pin PowerPAK 8 x 8, Drain-Source-Widerstand max.: 0,08 Ω, Channel-Modus: Enhancement, Gate-Schwellenspannung max

Vishay E Series SiHH080N60E-T1-GE3 N-Kanal Dual, SMD MOSFET 650 V / 32 A, 4-Pin PowerPAK 8 x 8, Drain-Source-Widerstand max.: 0,08 Ω, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 5V

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Vishay E Series SiHH080N60E-T1-GE3 N-Kanal Dual, SMD MOSFET 650 V / 32 A, 4-Pin PowerPAK 8 X 8

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Specifications of Vishay E Series SiHH080N60E-T1-GE3 N-Kanal Dual, SMD MOSFET 650 V / 32 A, 4-Pin PowerPAK 8 X 8

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Vishay E Series SiHH080N60E-T1-GE3 N-Kanal Dual, SMD MOSFET 650 V / 32 A, 4-Pin PowerPAK 8 X 8
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