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Vishay TrenchFET Si7454FDP-T1-RE3 N-Kanal Dual, SMD MOSFET 100 V / 23,5 A, 8-Pin PowerPAK SO-8

About The Vishay TrenchFET Si7454FDP-T1-RE3 N-Kanal Dual, SMD MOSFET 100 V / 23,5 A, 8-Pin PowerPAK SO-8, Drain-Source-Widerstand max.4V

Vishay TrenchFET Si7454FDP-T1-RE3 N-Kanal Dual, SMD MOSFET 100 V / 23,5 A, 8-Pin PowerPAK SO-8, Drain-Source-Widerstand max.: 0,0295 Ω, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 2.4V

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Vishay TrenchFET Si7454FDP-T1-RE3 N-Kanal Dual, SMD MOSFET 100 V / 23,5 A, 8-Pin PowerPAK SO-8

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Specifications of Vishay TrenchFET Si7454FDP-T1-RE3 N-Kanal Dual, SMD MOSFET 100 V / 23,5 A, 8-Pin PowerPAK SO-8

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Vishay TrenchFET Si7454FDP-T1-RE3 N-Kanal Dual, SMD MOSFET 100 V / 23,5 A, 8-Pin PowerPAK SO-8
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