Infineon OptiMOS IPG20N10S4L35AATMA1 N-Kanal Dual, SMD MOSFET Transistor & Diode 100 V / 20 A, 8-Pin SuperSO8 5 x 6, Drain-Source-Widerstand max.: 0,035 O, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 16V
Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET
Infineon OptiMOS IPG20N10S4L35AATMA1 N-Kanal Dual, SMD MOSFET Transistor & Diode 100 V / 20 A, 8-Pin SuperSO8 5 X 6
Specifications of Infineon OptiMOS IPG20N10S4L35AATMA1 N-Kanal Dual, SMD MOSFET Transistor & Diode 100 V / 20 A, 8-Pin SuperSO8 5 X 6 | |
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