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Vishay N-Channel 80-V SIJH800E-T1-GE3 N-Kanal, SMD MOSFET 80 V / 299 A, 4-Pin PowerPAK 8 X 8 L

About The Vishay N-Channel 80-V SIJH800E-T1-GE3 N-Kanal, SMD MOSFET 80 V / 299 A, 4-Pin PowerPAK 8 x 8 l, Drain-Source-Widerstand max.: 0,0018 Ω, Gate-Schwellenspannung max

Vishay N-Channel 80-V SIJH800E-T1-GE3 N-Kanal, SMD MOSFET 80 V / 299 A, 4-Pin PowerPAK 8 x 8 l, Drain-Source-Widerstand max.: 0,0018 Ω, Gate-Schwellenspannung max.: 4V

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Vishay N-Channel 80-V SIJH800E-T1-GE3 N-Kanal, SMD MOSFET 80 V / 299 A, 4-Pin PowerPAK 8 X 8 L

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Specifications of Vishay N-Channel 80-V SIJH800E-T1-GE3 N-Kanal, SMD MOSFET 80 V / 299 A, 4-Pin PowerPAK 8 X 8 L

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Vishay N-Channel 80-V SIJH800E-T1-GE3 N-Kanal, SMD MOSFET 80 V / 299 A, 4-Pin PowerPAK 8 X 8 L
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