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Vishay TrenchFET SUM90100E-GE3 N-Kanal, SMD MOSFET 200 V / 150 A, 3-Pin D2PAK (TO-263)

About The : 4V, Transistor-Werkstoff: Si.Vishay TrenchFET SUM90100E-GE3 N-Kanal, SMD MOSFET 200 V / 150 A, 3-Pin D2PAK (TO-263), Drain-Source-Widerstand max

Vishay TrenchFET SUM90100E-GE3 N-Kanal, SMD MOSFET 200 V / 150 A, 3-Pin D2PAK (TO-263), Drain-Source-Widerstand max.: 0,0114 Ω, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 4V, Transistor-Werkstoff: Si

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Vishay TrenchFET SUM90100E-GE3 N-Kanal, SMD MOSFET 200 V / 150 A, 3-Pin D2PAK (TO-263)

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Specifications of Vishay TrenchFET SUM90100E-GE3 N-Kanal, SMD MOSFET 200 V / 150 A, 3-Pin D2PAK (TO-263)

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Vishay TrenchFET SUM90100E-GE3 N-Kanal, SMD MOSFET 200 V / 150 A, 3-Pin D2PAK (TO-263)
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