Infineon CoolMOS P7 IPS80R750P7AKMA1 N-Kanal, THT MOSFET Transistor & Diode 800 V / 7 A, 3-Pin IPAK (TO-251), Drain-Source-Widerstand max.: 0,75 O, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 3.5V
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Infineon CoolMOS P7 IPS80R750P7AKMA1 N-Kanal, THT MOSFET Transistor & Diode 800 V / 7 A, 3-Pin IPAK (TO-251)
Specifications of Infineon CoolMOS P7 IPS80R750P7AKMA1 N-Kanal, THT MOSFET Transistor & Diode 800 V / 7 A, 3-Pin IPAK (TO-251) | |
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Instock | instock |