Vishay E Series SIHB120N60E-T1-GE3 N-Kanal Dual, SMD MOSFET 650 V / 25 A, 3-Pin D2PAK (TO-263), Drain-Source-Widerstand max.: 0,12 Ω, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 5V
Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET
Vishay E Series SIHB120N60E-T1-GE3 N-Kanal Dual, SMD MOSFET 650 V / 25 A, 3-Pin D2PAK (TO-263)
Specifications of Vishay E Series SIHB120N60E-T1-GE3 N-Kanal Dual, SMD MOSFET 650 V / 25 A, 3-Pin D2PAK (TO-263) | |
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Instock | instock |