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Vishay E Series SiHF080N60E-GE3 N-Kanal, THT MOSFET 650 V / 14 A, 3-Pin TO-220 FP

About The Vishay E Series SiHF080N60E-GE3 N-Kanal, THT MOSFET 650 V / 14 A, 3-Pin TO-220 FP, Drain-Source-Widerstand max.: 0,08 Ω, Channel-Modus: Enhancement, Gate-Schwellenspannung max

Vishay E Series SiHF080N60E-GE3 N-Kanal, THT MOSFET 650 V / 14 A, 3-Pin TO-220 FP, Drain-Source-Widerstand max.: 0,08 Ω, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 5V

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Vishay E Series SiHF080N60E-GE3 N-Kanal, THT MOSFET 650 V / 14 A, 3-Pin TO-220 FP

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Specifications of Vishay E Series SiHF080N60E-GE3 N-Kanal, THT MOSFET 650 V / 14 A, 3-Pin TO-220 FP

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Vishay E Series SiHF080N60E-GE3 N-Kanal, THT MOSFET 650 V / 14 A, 3-Pin TO-220 FP
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