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Vishay TrenchFET SQD50P06-15L_GE3 P-Kanal, SMD MOSFET 60 V / 50 A, 3-Pin DPAK (TO-252)

About The : 2.Vishay TrenchFET SQD50P06-15L_GE3 P-Kanal, SMD MOSFET 60 V / 50 A, 3-Pin DPAK (TO-252), Drain-Source-Widerstand max

Vishay TrenchFET SQD50P06-15L_GE3 P-Kanal, SMD MOSFET 60 V / 50 A, 3-Pin DPAK (TO-252), Drain-Source-Widerstand max.: 0,02 O, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 2.5V

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Vishay TrenchFET SQD50P06-15L_GE3 P-Kanal, SMD MOSFET 60 V / 50 A, 3-Pin DPAK (TO-252)

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Specifications of Vishay TrenchFET SQD50P06-15L_GE3 P-Kanal, SMD MOSFET 60 V / 50 A, 3-Pin DPAK (TO-252)

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Vishay TrenchFET SQD50P06-15L_GE3 P-Kanal, SMD MOSFET 60 V / 50 A, 3-Pin DPAK (TO-252)
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