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Infineon OptiMOS IPD30N06S2L13ATMA4 N-Kanal, SMD MOSFET 55 V / 30 A, 3-Pin DPAK (TO-252)

About The Infineon OptiMOS IPD30N06S2L13ATMA4 N-Kanal, SMD MOSFET 55 V / 30 A, 3-Pin DPAK (TO-252), Drain-Source-Widerstand max.: 2V

Infineon OptiMOS IPD30N06S2L13ATMA4 N-Kanal, SMD MOSFET 55 V / 30 A, 3-Pin DPAK (TO-252), Drain-Source-Widerstand max.: 0,013 Ω, Gate-Schwellenspannung max.: 2V

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Infineon OptiMOS IPD30N06S2L13ATMA4 N-Kanal, SMD MOSFET 55 V / 30 A, 3-Pin DPAK (TO-252)

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Specifications of Infineon OptiMOS IPD30N06S2L13ATMA4 N-Kanal, SMD MOSFET 55 V / 30 A, 3-Pin DPAK (TO-252)

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Infineon OptiMOS IPD30N06S2L13ATMA4 N-Kanal, SMD MOSFET 55 V / 30 A, 3-Pin DPAK (TO-252)
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