Infineon ISC ISC011N06LM5ATMA1 N-Kanal, SMD MOSFET 60 V / 288 A, 8-Pin SuperSO8 5 x 6, Drain-Source-Widerstand max.: 0,00115 Ω, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 2.3V
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Infineon ISC ISC011N06LM5ATMA1 N-Kanal, SMD MOSFET 60 V / 288 A, 8-Pin SuperSO8 5 X 6
Specifications of Infineon ISC ISC011N06LM5ATMA1 N-Kanal, SMD MOSFET 60 V / 288 A, 8-Pin SuperSO8 5 X 6 | |
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Instock | instock |