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Vishay TrenchFET® Gen IV SiSS22LDN-T1-GE3 N-Kanal, SMD MOSFET 60 V / 92,5 A, 8-Pin PowerPAK 1212-8S

About The Vishay TrenchFET® Gen IV SiSS22LDN-T1-GE3 N-Kanal, SMD MOSFET 60 V / 92,5 A, 8-Pin PowerPAK 1212-8S, Drain-Source-Widerstand max.5V

Vishay TrenchFET® Gen IV SiSS22LDN-T1-GE3 N-Kanal, SMD MOSFET 60 V / 92,5 A, 8-Pin PowerPAK 1212-8S, Drain-Source-Widerstand max.: 0,0051 Ω, 0,00365 Ω, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 2.5V

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Vishay TrenchFET® Gen IV SiSS22LDN-T1-GE3 N-Kanal, SMD MOSFET 60 V / 92,5 A, 8-Pin PowerPAK 1212-8S

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Specifications of Vishay TrenchFET® Gen IV SiSS22LDN-T1-GE3 N-Kanal, SMD MOSFET 60 V / 92,5 A, 8-Pin PowerPAK 1212-8S

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Vishay TrenchFET® Gen IV SiSS22LDN-T1-GE3 N-Kanal, SMD MOSFET 60 V / 92,5 A, 8-Pin PowerPAK 1212-8S
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