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STMicroelectronics STD STD13N60M6 N-Kanal, SMD MOSFET 480 V / 10 A, 3-Pin DPAK (TO-252)

About The .: 0,38 Ω, Channel-Modus: Depletion, Gate-Schwellenspannung max

STMicroelectronics STD STD13N60M6 N-Kanal, SMD MOSFET 480 V / 10 A, 3-Pin DPAK (TO-252), Drain-Source-Widerstand max.: 0,38 Ω, Channel-Modus: Depletion, Gate-Schwellenspannung max.: 25V

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

STMicroelectronics STD STD13N60M6 N-Kanal, SMD MOSFET 480 V / 10 A, 3-Pin DPAK (TO-252)

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Specifications of STMicroelectronics STD STD13N60M6 N-Kanal, SMD MOSFET 480 V / 10 A, 3-Pin DPAK (TO-252)

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STMicroelectronics STD STD13N60M6 N-Kanal, SMD MOSFET 480 V / 10 A, 3-Pin DPAK (TO-252)
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