Infineon OptiMOS™-T2 IPG20N10S436AATMA1 N-Kanal Dual, SMD MOSFET 100 V / 20 A, 8-Pin SuperSO8 5 x 6 Dual, Drain-Source-Widerstand max.: 0,036 Ω, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 3.5V, Transistor-Werkstoff: Si
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Infineon OptiMOS™-T2 IPG20N10S436AATMA1 N-Kanal Dual, SMD MOSFET 100 V / 20 A, 8-Pin SuperSO8 5 X 6 Dual
Specifications of Infineon OptiMOS™-T2 IPG20N10S436AATMA1 N-Kanal Dual, SMD MOSFET 100 V / 20 A, 8-Pin SuperSO8 5 X 6 Dual | |
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