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Infineon CoolSiC IMZA65R027M1HXKSA1 N-Kanal, THT MOSFET 650 V / 59 A, 4-Pin TO-247-4

About The Infineon CoolSiC IMZA65R027M1HXKSA1 N-Kanal, THT MOSFET 650 V / 59 A, 4-Pin TO-247-4, Drain-Source-Widerstand max.: 0,034 Ω, Channel-Modus: Enhancement, Gate-Schwellenspannung max

Infineon CoolSiC IMZA65R027M1HXKSA1 N-Kanal, THT MOSFET 650 V / 59 A, 4-Pin TO-247-4, Drain-Source-Widerstand max.: 0,034 Ω, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 5.7V, Transistor-Werkstoff: Silicon

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Infineon CoolSiC IMZA65R027M1HXKSA1 N-Kanal, THT MOSFET 650 V / 59 A, 4-Pin TO-247-4

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Specifications of Infineon CoolSiC IMZA65R027M1HXKSA1 N-Kanal, THT MOSFET 650 V / 59 A, 4-Pin TO-247-4

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Infineon CoolSiC IMZA65R027M1HXKSA1 N-Kanal, THT MOSFET 650 V / 59 A, 4-Pin TO-247-4
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