Vishay N-Channel 30 V SQJ128ELP-T1_GE3 N-Kanal, SMD MOSFET 30 V / 437 A, 4-Pin PowerPAK 8 x 8 l, Drain-Source-Widerstand max.: 0,002 Ω, Gate-Schwellenspannung max.: 2.2V
Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET
Vishay N-Channel 30 V SQJ128ELP-T1_GE3 N-Kanal, SMD MOSFET 30 V / 437 A, 4-Pin PowerPAK 8 X 8 L
Specifications of Vishay N-Channel 30 V SQJ128ELP-T1_GE3 N-Kanal, SMD MOSFET 30 V / 437 A, 4-Pin PowerPAK 8 X 8 L | |
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Instock | instock |