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Vishay TrenchFET SiZF906BDT-T1-GE3 N-Kanal Dual, SMD MOSFET 30 V / 257 A, 8-Pin PowerPAIR 6 X 5 F.

About The : 2., Drain-Source-Widerstand max

Vishay TrenchFET SiZF906BDT-T1-GE3 N-Kanal Dual, SMD MOSFET 30 V / 257 A, 8-Pin PowerPAIR 6 x 5 F., Drain-Source-Widerstand max.: 0,0021 Ω, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 2.2V

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Vishay TrenchFET SiZF906BDT-T1-GE3 N-Kanal Dual, SMD MOSFET 30 V / 257 A, 8-Pin PowerPAIR 6 X 5 F.

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Specifications of Vishay TrenchFET SiZF906BDT-T1-GE3 N-Kanal Dual, SMD MOSFET 30 V / 257 A, 8-Pin PowerPAIR 6 X 5 F.

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Vishay TrenchFET SiZF906BDT-T1-GE3 N-Kanal Dual, SMD MOSFET 30 V / 257 A, 8-Pin PowerPAIR 6 X 5 F.
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