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STMicroelectronics SCTH60N120G2-7 N-Kanal, SMD MOSFET 1200 V / 60 A, 7-Pin H2PAK-7

About The : 5V, Transistor-Werkstoff: Silicon.STMicroelectronics SCTH60N120G2-7 N-Kanal, SMD MOSFET 1200 V / 60 A, 7-Pin H2PAK-7, Drain-Source-Widerstand max

STMicroelectronics SCTH60N120G2-7 N-Kanal, SMD MOSFET 1200 V / 60 A, 7-Pin H2PAK-7, Drain-Source-Widerstand max.: 0,052 Ω, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 5V, Transistor-Werkstoff: Silicon

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

STMicroelectronics SCTH60N120G2-7 N-Kanal, SMD MOSFET 1200 V / 60 A, 7-Pin H2PAK-7

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Specifications of STMicroelectronics SCTH60N120G2-7 N-Kanal, SMD MOSFET 1200 V / 60 A, 7-Pin H2PAK-7

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STMicroelectronics SCTH60N120G2-7 N-Kanal, SMD MOSFET 1200 V / 60 A, 7-Pin H2PAK-7
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