STMicroelectronics SCTH60N120G2-7 N-Kanal, SMD MOSFET 1200 V / 60 A, 7-Pin H2PAK-7, Drain-Source-Widerstand max.: 0,052 Ω, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 5V, Transistor-Werkstoff: Silicon
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STMicroelectronics SCTH60N120G2-7 N-Kanal, SMD MOSFET 1200 V / 60 A, 7-Pin H2PAK-7
Specifications of STMicroelectronics SCTH60N120G2-7 N-Kanal, SMD MOSFET 1200 V / 60 A, 7-Pin H2PAK-7 | |
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Instock | instock |