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Vishay TrenchFET SIJH112E-T1-GE3 N-Kanal, SMD MOSFET 100 V / 225 A, 4-Pin PowerPAK 8 X 8L

About The Vishay TrenchFET SIJH112E-T1-GE3 N-Kanal, SMD MOSFET 100 V / 225 A, 4-Pin PowerPAK 8 x 8L, Drain-Source-Widerstand max.: 0,0028 Ω, Channel-Modus: Enhancement, Gate-Schwellenspannung max

Vishay TrenchFET SIJH112E-T1-GE3 N-Kanal, SMD MOSFET 100 V / 225 A, 4-Pin PowerPAK 8 x 8L, Drain-Source-Widerstand max.: 0,0028 Ω, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 4V

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Vishay TrenchFET SIJH112E-T1-GE3 N-Kanal, SMD MOSFET 100 V / 225 A, 4-Pin PowerPAK 8 X 8L

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Specifications of Vishay TrenchFET SIJH112E-T1-GE3 N-Kanal, SMD MOSFET 100 V / 225 A, 4-Pin PowerPAK 8 X 8L

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Vishay TrenchFET SIJH112E-T1-GE3 N-Kanal, SMD MOSFET 100 V / 225 A, 4-Pin PowerPAK 8 X 8L
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