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Infineon IPB IPB120P04P4L03ATMA2 P-Kanal, SMD MOSFET 40 V / 120 A, 3-Pin D2PAK (TO-263)

About The Infineon IPB IPB120P04P4L03ATMA2 P-Kanal, SMD MOSFET 40 V / 120 A, 3-Pin D2PAK (TO-263), Drain-Source-Widerstand max.: 2

Infineon IPB IPB120P04P4L03ATMA2 P-Kanal, SMD MOSFET 40 V / 120 A, 3-Pin D2PAK (TO-263), Drain-Source-Widerstand max.: 0,0031 Ω, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 2.2V, Transistor-Werkstoff: Silicon

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Infineon IPB IPB120P04P4L03ATMA2 P-Kanal, SMD MOSFET 40 V / 120 A, 3-Pin D2PAK (TO-263)

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Specifications of Infineon IPB IPB120P04P4L03ATMA2 P-Kanal, SMD MOSFET 40 V / 120 A, 3-Pin D2PAK (TO-263)

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Infineon IPB IPB120P04P4L03ATMA2 P-Kanal, SMD MOSFET 40 V / 120 A, 3-Pin D2PAK (TO-263)
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