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ROHM R6504END3TL1 N-Kanal, SMD MOSFET 650 V / 4 A, 3-Pin DPAK (TO-252)

About The : 4V.ROHM R6504END3TL1 N-Kanal, SMD MOSFET 650 V / 4 A, 3-Pin DPAK (TO-252), Drain-Source-Widerstand max

ROHM R6504END3TL1 N-Kanal, SMD MOSFET 650 V / 4 A, 3-Pin DPAK (TO-252), Drain-Source-Widerstand max.: 1,05 Ω, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 4V

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

ROHM R6504END3TL1 N-Kanal, SMD MOSFET 650 V / 4 A, 3-Pin DPAK (TO-252)

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Specifications of ROHM R6504END3TL1 N-Kanal, SMD MOSFET 650 V / 4 A, 3-Pin DPAK (TO-252)

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ROHM R6504END3TL1 N-Kanal, SMD MOSFET 650 V / 4 A, 3-Pin DPAK (TO-252)
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