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Infineon IPG IPG20N04S4L11AATMA1 N-Kanal Dual, SMD MOSFET 40 V / 20 A, 8-Pin SuperSO8 5 X 6 Dual

About The 2V, Transistor-Werkstoff: Silicon.: 2

Infineon IPG IPG20N04S4L11AATMA1 N-Kanal Dual, SMD MOSFET 40 V / 20 A, 8-Pin SuperSO8 5 x 6 Dual, Drain-Source-Widerstand max.: 0,0116 Ω, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 2.2V, Transistor-Werkstoff: Silicon

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Infineon IPG IPG20N04S4L11AATMA1 N-Kanal Dual, SMD MOSFET 40 V / 20 A, 8-Pin SuperSO8 5 X 6 Dual

Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET

Specifications of Infineon IPG IPG20N04S4L11AATMA1 N-Kanal Dual, SMD MOSFET 40 V / 20 A, 8-Pin SuperSO8 5 X 6 Dual

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Infineon IPG IPG20N04S4L11AATMA1 N-Kanal Dual, SMD MOSFET 40 V / 20 A, 8-Pin SuperSO8 5 X 6 Dual
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