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Infineon FP50R12W2T7BPSA1 Common Emitter IGBT, 50 A 1200 V, 35-Pin, Panel Mount

About The Infineon FP50R12W2T7BPSA1 Common Emitter IGBT, 50 A 1200 V, 35-Pin, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 20 mW, Number of Transistors: 6

Infineon FP50R12W2T7BPSA1 Common Emitter IGBT, 50 A 1200 V, 35-Pin, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 20 mW, Number of Transistors: 6

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Infineon FP50R12W2T7BPSA1 Common Emitter IGBT, 50 A 1200 V, 35-Pin, Panel Mount

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Infineon FP50R12W2T7BPSA1 Common Emitter IGBT, 50 A 1200 V, 35-Pin, Panel Mount

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Infineon FP50R12W2T7BPSA1 Common Emitter IGBT, 50 A 1200 V, 35-Pin, Panel Mount
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    • Infineon FP50R12W2T7BPSA1 Common Emitter IGBT, 50 A 1200 V, 35-Pin, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 20 mW, Number of Transistors: 6
    • TE Connectivity 680kΩ, 0805 (2012M) Thin Film SMD Resistor ±0.1% 0.1W - CPF0805B680KE, Temperature Coefficient: ±25ppm/°C, Minimum Operating Temperature: -55°C, Maximum Operating Temperature: +125°C
    • Infineon FP50R12W2T7BPSA1 Common Emitter IGBT, 50 A 1200 V, 35-Pin, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 20 mW, Number of Transistors: 6
    • TE Connectivity 680kΩ, 0805 (2012M) Thin Film SMD Resistor ±0.1% 0.1W - CPF0805B680KE, Temperature Coefficient: ±25ppm/°C, Minimum Operating Temperature: -55°C, Maximum Operating Temperature: +125°C