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Infineon N-Channel MOSFET Transistor & Diode, 30 A, 650 V, 5-Pin ThinPAK 5 X 6 IPL60R360P6SATMA1

About The Infineon N-Channel MOSFET Transistor & Diode, 30 A, 650 V, 5-Pin ThinPAK 5 x 6 IPL60R360P6SATMA1, Series: CoolMOS™ P6, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.5V

Infineon N-Channel MOSFET Transistor & Diode, 30 A, 650 V, 5-Pin ThinPAK 5 x 6 IPL60R360P6SATMA1, Series: CoolMOS™ P6, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.36 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET Transistor & Diode, 30 A, 650 V, 5-Pin ThinPAK 5 X 6 IPL60R360P6SATMA1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET Transistor & Diode, 30 A, 650 V, 5-Pin ThinPAK 5 X 6 IPL60R360P6SATMA1

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Infineon N-Channel MOSFET Transistor & Diode, 30 A, 650 V, 5-Pin ThinPAK 5 X 6 IPL60R360P6SATMA1
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