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Infineon Dual N-Channel MOSFET Transistor & Diode, 20 A, 100 V, 8-Pin SuperSO8 5 X 6 IPG20N10S4L35AATMA1

About The 035 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 16V.Infineon Dual N-Channel MOSFET Transistor & Diode, 20 A, 100 V, 8-Pin SuperSO8 5 x 6 IPG20N10S4L35AATMA1, Series: OptiMOS™, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0

Infineon Dual N-Channel MOSFET Transistor & Diode, 20 A, 100 V, 8-Pin SuperSO8 5 x 6 IPG20N10S4L35AATMA1, Series: OptiMOS™, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.035 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 16V

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon Dual N-Channel MOSFET Transistor & Diode, 20 A, 100 V, 8-Pin SuperSO8 5 X 6 IPG20N10S4L35AATMA1

More from Infineon Dual N-Channel MOSFET Transistor & Diode, 20 A, 100 V, 8-Pin SuperSO8 5 X 6 IPG20N10S4L35AATMA1, Series: OptiMOS™, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.035 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 16V | Infineon
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Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon Dual N-Channel MOSFET Transistor & Diode, 20 A, 100 V, 8-Pin SuperSO8 5 X 6 IPG20N10S4L35AATMA1

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Infineon Dual N-Channel MOSFET Transistor & Diode, 20 A, 100 V, 8-Pin SuperSO8 5 X 6 IPG20N10S4L35AATMA1
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