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STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTH40N120G2V7AG

About The STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTH40N120G2V7AG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.105 Ω, Maximum Gate Threshold Voltage: 5V

STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTH40N120G2V7AG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.105 Ω, Maximum Gate Threshold Voltage: 5V

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTH40N120G2V7AG

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTH40N120G2V7AG

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STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTH40N120G2V7AG
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