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Infineon Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin SuperSO8 5 X 6 Dual IPG20N06S4L11AATMA1

About The Infineon Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N06S4L11AATMA1, Series: OptiMOS™ -T2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.2V

Infineon Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N06S4L11AATMA1, Series: OptiMOS™ -T2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0112 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin SuperSO8 5 X 6 Dual IPG20N06S4L11AATMA1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin SuperSO8 5 X 6 Dual IPG20N06S4L11AATMA1

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Infineon Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin SuperSO8 5 X 6 Dual IPG20N06S4L11AATMA1
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