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Onsemi 2N6387G NPN Darlington Transistor, 10 A Dc 60 V Dc HFE:1000, 3-Pin TO-220

About The onsemi 2N6387G NPN Darlington Transistor, 10 A dc 60 V dc HFE:1000, 3-Pin TO-220, Maximum Emitter Base Voltage: 5 V dc, Mounting Type: Through Hole, Configuration: Single, Maximum Collector Emitter Saturation Voltage: 3 V dc, Dimensions: 10.83 x 15

onsemi 2N6387G NPN Darlington Transistor, 10 A dc 60 V dc HFE:1000, 3-Pin TO-220, Maximum Emitter Base Voltage: 5 V dc, Mounting Type: Through Hole, Configuration: Single, Maximum Collector Emitter Saturation Voltage: 3 V dc, Dimensions: 10.53 x 4.83 x 15.75mm

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > Darlington Pairs

Onsemi 2N6387G NPN Darlington Transistor, 10 A Dc 60 V Dc HFE:1000, 3-Pin TO-220

More from Onsemi? Onsemi 2N6387G NPN Darlington Transistor, 10 A Dc 60 V Dc HFE:1000, 3-Pin TO-220, Maximum Emitter Base Voltage: 5 V Dc, Mounting Type: Through Hole, Configuration: Single, Maximum Collector Emitter Saturation Voltage: 3 V Dc, Dimensions: 10.53 X 4.83 X 15.75mm
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Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > Darlington Pairs

Specifications of Onsemi 2N6387G NPN Darlington Transistor, 10 A Dc 60 V Dc HFE:1000, 3-Pin TO-220

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Onsemi 2N6387G NPN Darlington Transistor, 10 A Dc 60 V Dc HFE:1000, 3-Pin TO-220
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