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Vishay 600V 30A, Silicon Junction Diode, 2-Pin TO-220FP VS-ETU3006FP-M3

About The Vishay 600V 30A, Silicon Junction Diode, 2-Pin TO-220FP VS-ETU3006FP-M3, Mounting Type: Through Hole, Diode Configuration: Single, Maximum Forward Voltage Drop: 2V, Number of Elements per Chip: 1, Peak Reverse Recovery Time: 100ns, Peak Non-Repetitive Forward Surge Current: 200A

Vishay 600V 30A, Silicon Junction Diode, 2-Pin TO-220FP VS-ETU3006FP-M3, Mounting Type: Through Hole, Diode Configuration: Single, Maximum Forward Voltage Drop: 2V, Number of Elements per Chip: 1, Peak Reverse Recovery Time: 100ns, Peak Non-Repetitive Forward Surge Current: 200A

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > Schottky Diodes & Rectifiers

Vishay 600V 30A, Silicon Junction Diode, 2-Pin TO-220FP VS-ETU3006FP-M3

More from Vishay - Vishay 600V 30A, Silicon Junction Diode, 2-Pin TO-220FP VS-ETU3006FP-M3, Mounting Type: Through Hole, Diode Configuration: Single, Maximum Forward Voltage Drop: 2V, Number Of Elements Per Chip: 1, Peak Reverse Recovery Time: 100ns, Peak Non-Repetitive Forward Surge Current: 200A
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Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > Schottky Diodes & Rectifiers

Specifications of Vishay 600V 30A, Silicon Junction Diode, 2-Pin TO-220FP VS-ETU3006FP-M3

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Vishay 600V 30A, Silicon Junction Diode, 2-Pin TO-220FP VS-ETU3006FP-M3
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