Infineon FP50R12KT4B11BOSA1 3 Phase Bridge IGBT Module, 50 A 1200 V, 23-Pin ECONO2, PCB Mount
About The 5 x 45 x 17mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, MPN: FP50R12KT4_B11.Infineon FP50R12KT4B11BOSA1 3 Phase Bridge IGBT Module, 50 A 1200 V, 23-Pin ECONO2, PCB Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 160 W, Switching Speed: 1MHz, Dimensions: 107
Infineon FP50R12KT4B11BOSA1 3 Phase Bridge IGBT Module, 50 A 1200 V, 23-Pin ECONO2, PCB Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 160 W, Switching Speed: 1MHz, Dimensions: 107.5 x 45 x 17mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, MPN: FP50R12KT4_B11
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs
Infineon FP50R12KT4B11BOSA1 3 Phase Bridge IGBT Module, 50 A 1200 V, 23-Pin ECONO2, PCB Mount
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs
Specifications of Infineon FP50R12KT4B11BOSA1 3 Phase Bridge IGBT Module, 50 A 1200 V, 23-Pin ECONO2, PCB Mount | |
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