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Semikron SKM200GB126D Dual Half Bridge IGBT Module, 260 A 1200 V, 7-Pin SEMITRANS3, Panel Mount

About The Semikron SKM200GB126D Dual Half Bridge IGBT Module, 260 A 1200 V, 7-Pin SEMITRANS3, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Series, Dimensions: 106.4 x 61

Semikron SKM200GB126D Dual Half Bridge IGBT Module, 260 A 1200 V, 7-Pin SEMITRANS3, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Series, Dimensions: 106.4 x 61.4 x 30mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 61.4mm

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Semikron SKM200GB126D Dual Half Bridge IGBT Module, 260 A 1200 V, 7-Pin SEMITRANS3, Panel Mount

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Semikron SKM200GB126D Dual Half Bridge IGBT Module, 260 A 1200 V, 7-Pin SEMITRANS3, Panel Mount

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Semikron SKM200GB126D Dual Half Bridge IGBT Module, 260 A 1200 V, 7-Pin SEMITRANS3, Panel Mount
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