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Onsemi NXH350N100H4Q2F2S1G IGBT Module, 303 A 1000 V Q2PACK (Pb-Free/Halide-Free)

About The onsemi NXH350N100H4Q2F2S1G IGBT Module, 303 A 1000 V Q2PACK (Pb-Free/Halide-Free), Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 592 W

onsemi NXH350N100H4Q2F2S1G IGBT Module, 303 A 1000 V Q2PACK (Pb-Free/Halide-Free), Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 592 W

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Onsemi NXH350N100H4Q2F2S1G IGBT Module, 303 A 1000 V Q2PACK (Pb-Free/Halide-Free)

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Onsemi NXH350N100H4Q2F2S1G IGBT Module, 303 A 1000 V Q2PACK (Pb-Free/Halide-Free)

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Onsemi NXH350N100H4Q2F2S1G IGBT Module, 303 A 1000 V Q2PACK (Pb-Free/Halide-Free)
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    • onsemi NXH350N100H4Q2F2S1G IGBT Module, 303 A 1000 V Q2PACK (Pb-Free/Halide-Free), Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 592 W
    • Wurth Elektronik 47μF Aluminium Electrolytic Capacitor 35V dc, Surface Mount - 865090549009, Capacitance: 47µF, Dimensions: 6.5 (Dia.) x 7.85mm, Minimum Operating Temperature: -40°C, Diameter: 8mm, Maximum Operating Temperature: +85°C, Lead Pitch: 2.3mm, Lifetime: 1000h, Leakage Current: 3.29 μA, Polarised: Polar, Ripple Current: 80mA, Series: WCAP-ASLU
    • onsemi NXH350N100H4Q2F2S1G IGBT Module, 303 A 1000 V Q2PACK (Pb-Free/Halide-Free), Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 592 W