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Infineon IKW40N65RH5XKSA1 Single IGBT Transistor Module, 40 A 650 V PG-TO247-3

About The Infineon IKW40N65RH5XKSA1 Single IGBT Transistor Module, 40 A 650 V PG-TO247-3, Maximum Gate Emitter Voltage: 15V, Maximum Power Dissipation: 250 W

Infineon IKW40N65RH5XKSA1 Single IGBT Transistor Module, 40 A 650 V PG-TO247-3, Maximum Gate Emitter Voltage: 15V, Maximum Power Dissipation: 250 W

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Infineon IKW40N65RH5XKSA1 Single IGBT Transistor Module, 40 A 650 V PG-TO247-3

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Infineon IKW40N65RH5XKSA1 Single IGBT Transistor Module, 40 A 650 V PG-TO247-3

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Infineon IKW40N65RH5XKSA1 Single IGBT Transistor Module, 40 A 650 V PG-TO247-3
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