Infineon FS75R12KT4B15BOSA1 3 Phase Bridge IGBT Module, 75 A 1200 V, 28-Pin ECONO2, PCB Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 385 W, Switching Speed: 1MHz, Dimensions: 107.5 x 45 x 17mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, MPN: FS75R12KT4_B15
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs
Infineon FS75R12KT4B15BOSA1 3 Phase Bridge IGBT Module, 75 A 1200 V, 28-Pin ECONO2, PCB Mount
Specifications of Infineon FS75R12KT4B15BOSA1 3 Phase Bridge IGBT Module, 75 A 1200 V, 28-Pin ECONO2, PCB Mount | |
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