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Infineon FF150R12KS4HOSA1 Series IGBT Module, 225 A 1200 V, 7-Pin 62MM Module, Panel Mount

About The Infineon FF150R12KS4HOSA1 Series IGBT Module, 225 A 1200 V, 7-Pin 62MM Module, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 1250 W, Switching Speed: 1MHz, Dimensions: 106.4 x 29mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

Infineon FF150R12KS4HOSA1 Series IGBT Module, 225 A 1200 V, 7-Pin 62MM Module, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 1250 W, Switching Speed: 1MHz, Dimensions: 106.4 x 61.4 x 29mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Infineon FF150R12KS4HOSA1 Series IGBT Module, 225 A 1200 V, 7-Pin 62MM Module, Panel Mount

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Infineon FF150R12KS4HOSA1 Series IGBT Module, 225 A 1200 V, 7-Pin 62MM Module, Panel Mount

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Infineon FF150R12KS4HOSA1 Series IGBT Module, 225 A 1200 V, 7-Pin 62MM Module, Panel Mount
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    • Infineon FF150R12KS4HOSA1 Series IGBT Module, 225 A 1200 V, 7-Pin 62MM Module, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 1250 W, Switching Speed: 1MHz, Dimensions: 106.4 x 61.4 x 29mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C
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    • Infineon FF150R12KS4HOSA1 Series IGBT Module, 225 A 1200 V, 7-Pin 62MM Module, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 1250 W, Switching Speed: 1MHz, Dimensions: 106.4 x 61.4 x 29mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C