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Festo Tee Threaded Adaptor, R 1/2 Female To Push In 12 Mm, Threaded-to-Tube Connection Style, 153191

About The Festo Tee Threaded Adaptor, R 1/2 Female to Push In 12 mm, Threaded-to-Tube Connection Style, 153191, Threaded Connection: R 1/2 Male, Maximum Operating Pressure: 6 bar, MPN: QSTF-1/2-12-B

Festo Tee Threaded Adaptor, R 1/2 Female to Push In 12 mm, Threaded-to-Tube Connection Style, 153191, Threaded Connection: R 1/2 Male, Maximum Operating Pressure: 6 bar, MPN: QSTF-1/2-12-B

Mechanical & Fluid Power & Tools > Pneumatics & Hydraulics > Pneumatic Connectors & Fittings & Hose > Pneumatic Fittings

Festo Tee Threaded Adaptor, R 1/2 Female To Push In 12 Mm, Threaded-to-Tube Connection Style, 153191

More from Festo - Festo Tee Threaded Adaptor, R 1/2 Female To Push In 12 Mm, Threaded-to-Tube Connection Style, 153191, Threaded Connection: R 1/2 Male, Maximum Operating Pressure: 6 Bar, MPN: QSTF-1/2-12-B
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Specifications of Festo Tee Threaded Adaptor, R 1/2 Female To Push In 12 Mm, Threaded-to-Tube Connection Style, 153191

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Festo Tee Threaded Adaptor, R 1/2 Female To Push In 12 Mm, Threaded-to-Tube Connection Style, 153191
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    • Festo Tee Threaded Adaptor, R 1/2 Female to Push In 12 mm, Threaded-to-Tube Connection Style, 153191, Threaded Connection: R 1/2 Male, Maximum Operating Pressure: 6 bar, MPN: QSTF-1/2-12-B
    • Infineon N-Channel MOSFET, 80 A, 100 V, 3-Pin D2PAK IPB083N10N3GATMA1, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 15.1 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 125 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V
    • Festo Tee Threaded Adaptor, R 1/2 Female to Push In 12 mm, Threaded-to-Tube Connection Style, 153191, Threaded Connection: R 1/2 Male, Maximum Operating Pressure: 6 bar, MPN: QSTF-1/2-12-B
    • Infineon N-Channel MOSFET, 80 A, 100 V, 3-Pin D2PAK IPB083N10N3GATMA1, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 15.1 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 125 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V