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Infineon FF200R12KE3HOSA1 Series IGBT Module, 295 A 1200 V, 7-Pin 62MM Module, Panel Mount

About The 4 x 29mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C.4 x 61

Infineon FF200R12KE3HOSA1 Series IGBT Module, 295 A 1200 V, 7-Pin 62MM Module, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 1050 W, Switching Speed: 1MHz, Dimensions: 106.4 x 61.4 x 29mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Infineon FF200R12KE3HOSA1 Series IGBT Module, 295 A 1200 V, 7-Pin 62MM Module, Panel Mount

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Infineon FF200R12KE3HOSA1 Series IGBT Module, 295 A 1200 V, 7-Pin 62MM Module, Panel Mount

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Infineon FF200R12KE3HOSA1 Series IGBT Module, 295 A 1200 V, 7-Pin 62MM Module, Panel Mount
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    • Infineon FF200R12KE3HOSA1 Series IGBT Module, 295 A 1200 V, 7-Pin 62MM Module, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 1050 W, Switching Speed: 1MHz, Dimensions: 106.4 x 61.4 x 29mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C
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